封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | Sawn Wafer |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
环境和出口类别
| Pb (Lead) Free | No |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | Sawn Wafer |
| Pb (Lead) Free | No |
| Application | Inverter |
| Channels (#) | 1 |
| IC (A) | 300 |
| Ic (Peak) (A) | 900 |
| Lead Compliant | No |
| MOQ | 1 |
| Nch/Pch | Nch |
| Qualification Level | Automotive |
| Simulation Model Available | Yes |
| Tape & Reel | No |
| Technology | AE5 |
| Tj (°C) | 185 |
| VCE (sat) (V) | 1.35 |
| VCES (V) | 750 |
| VGE (Off) (V) | 5.5 |
| tsc (μs) | 3.4 |
有关 RBN300N75A5JWS 的资源
描述
Renesas' AE5 IGBTs for automotive applications use a unique trench gate configuration in their process structure.
- The lowest conduction loss on the market
- Achieve low saturation voltage, low switching loss, and chip shrink without sacrificing robustness
- Easier parallel operation by suppressing Vth variation
- Achieve Tjmax 185degC from 175degC (AE4), resulting in more stable performance in high temperature area
This 750V/300A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.