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60V, 10A Silicon N Channel Thermal FET Power Switching

封装信息

Pkg. Type HSON
Pkg. Code pkg_7528
Lead Count (#) 8
Pkg. Dimensions (mm) 5.4 x 5 x 1.45

环境和出口类别

Moisture Sensitivity Level (MSL) 1
ECCN (US) EAR99
RoHS (RJF0628JNS-00#Q7) 英语日文
Pb (Lead) Free Yes
HTS (US)

产品属性

Pkg. Type HSON
Standard Pkg. Type 8-pin HSON Single
Carrier Type Embossed Tape
Moisture Sensitivity Level (MSL) 1
Country of Assembly Japan
Country of Wafer Fabrication Japan
Price (USD) | 1ku 0.86751
Application Automotive Use
Automotive Qual. Yes
Channels (#) 1
Channels per device (#) 1
Function Thermal FETs
ID (A) 10
Lead Compliant No
Lead Count (#) 8
Length (mm) 5.4
MOQ 2500
Mounting Type Surface Mount
Nch/Pch Nch
Pb (Lead) Free Yes
Pch (W) 40
Pkg. Dimensions (mm) 5.4 x 5 x 1.45
Qualification Level Automotive
RDS (ON) (Max) @10V or 8V (mohm) 75
RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) 100
RDS (ON) (Typical) @ 10V / 8V (mohm) 63.8
RDS (on) (Max) @4V to 4.5V (mohm) 100
RDS (on) (Max) @8V to 10V (mohm) 75
RDS (on) (ohm) typ. @4V to 4.5V (mohm) 81
RDS (on) (ohm) typ. @8V to 10V (mohm) 63.8
Simulation Model Available Yes
Tape & Reel No
Thickness (mm) 1.45
VDSS (Max) (V) 60
Vgs (off) (Max) (V) 2.1
Width (mm) 5

描述

This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.