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瑞萨电子 (Renesas Electronics Corporation)

特性

  • Logic level operation (4V gate drive)
  • Built-in overtemperature shut-down circuit and current limitation circuit
  • High endurance capability against short circuit
  • Temperature hysteresis type
  • High-density mounting
  • Built-in current limitation circuit
  • Power supply voltage applies 12V and 24V
  • AEC-Q101 Rev-E compliant

描述

This FET has overtemperature shut-down capability sensing for junction temperature. This FET also has a built-in overtemperature shut-down circuit in the gate area, and circuit operation to shut down the gate voltage in case of high junction temperature caused by excessive power consumption, overcurrent, etc.

产品参数

属性值
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeSO8-FL 5x6 BSC
Gate LevelLogic
VDSS (Max) (V)60
ID (A)10
RDS (ON) (Max) @10V (mohm)75
RDS (ON) (Max) @4.5V (mohm)100
Pch (W)40
Series NameThermal FETs

封装选项

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
HSON5.4 x 5 x 1.458

应用方框图

Fail-safe Electro-Mechanical Braking (EMB) block diagram showing an ASIL-ready wheel end actuator with redundant power and communication interfaces, integrated motor control, and fail-safe brake actuation.
Electro-Mechanical Braking (EMB) Fail-Safe System
ASIL-ready EMB wheel end actuator featuring fail-safe operation, redundant interfaces, and integrated motor control.

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