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特性

  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
  • Built in fast recovery diode in one package
  • Trench gate and thin wafer technology
  • High-Speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Ω, Tj = 125°C, inductive load)

描述

The RJH65S04DPQ-A0 is a 650V 100A Single Insulated-Gate Bipolar Transistor (IGBT) for inverter applications.

Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier TypePb (Lead) Free
RJH65S04DPQ-A0#T0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TO-247A3#TubeYes
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