特性
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High-Speed switching tf = 80 ns typ. (at CC = 300 V, VGE = 15 V, IC = 50 A, Rg = 10 Ω, Tj = 125°C, inductive load)
描述
The RJH65S04DPQ-A0 is a 650V 100A Single Insulated-Gate Bipolar Transistor (IGBT) for inverter applications.
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