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特性

  • Low on-state resistance
    RDS(on) = 1.9 Ω typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25°C)
  • Low drive current
  • High speed switching

描述

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

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