特性
- 1200V AE4 Trench & Field Stop Technology
- Low collector to emitter saturation voltage VCE (sat) = 1.5V typ. (at IC = 150A, VGE = 15V, Tj = 25°C)
- Low switching loss
- Easy paralleling by internal Rg
描述
Renesas' AE4 IGBTs use a unique trench gate configuration in its process structure. These devices offer low saturation voltage without sacrificing robustness, while also minimizing switching losses. This 1200V/150A IGBT is optimized for high-power applications such as inverters.
应用
- High speed switching
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