封装信息
| Pkg. Type | Wafer |
| Pkg. Code | |
| Lead Count (#) | |
| Pkg. Dimensions (mm) |
环境和出口类别
| Pb (Lead) Free | No |
| ECCN (US) | 5A002 |
| RoHS (RJP1CS03DWA-80#W0) | 英语日文 |
| Moisture Sensitivity Level (MSL) | |
| HTS (US) |
产品属性
| Pkg. Type | Wafer |
| Pb (Lead) Free | No |
| Application | Inverter |
| Channels (#) | 1 |
| IC @100 °C (A) | 30 |
| IC @25 °C (A) | 60 |
| Lead Compliant | No |
| MOQ | 1 |
| Nch/Pch | Nch |
| Qualification Level | Industrial |
| Series Name | 1CSxx Series |
| Tape & Reel | No |
| VCE (sat) (V) | 1.8 |
| VCES (V) | 1250 |
| VDSS (Max) (V) | 1250 |
| tf (Typical) (µs) | 0.16 |
| tsc (μs) | 10 |
描述
RJP1CS03DWA 1250V、30A 绝缘栅双极晶体管（IGBT）提供低集电极至发射极饱和电压，可用于逆变器应用。 该器件采用未切割晶圆封装类型。