跳转到主要内容
瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

特性

  • Renesas generation 7th Trench IGBT
  • Low collector to emitter saturation voltage VCE(sat) = 1.55V typ. (at IC = 50A, VGE = 15V, Tc = 25 °C)
  • Moderate speed switching
  • Short circuit withstands time (10μs min.)

描述

The RJP1CS24DWA 1250V, 50A, trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.

应用

  • Inverters
Part NumberStatusSamplesStockRoHSPackagePb (Lead) Free
RJP1CS24DWA-80#W0ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
WaferNo
支持社区

支持社区

在线询问瑞萨电子工程社群的技术人员,快速获得技术支持。
浏览文章

知识库

浏览我们的知识库,获取文章、常见问题解答及其他实用资源。
提交工单

提交工单

需要咨询技术性问题或提供非公开信息吗?