特性
- Gate emitter voltage: -30V to 30V
- Saturated collector emitter voltage: 1.55V
- DC collector current: 150A to 300A
- Collector emitter voltage 1250V
- RoHS compliant
描述
The RJP1CS27DWT is a 1250V, 150A, single switch, insulated-gate bipolar transistor (IGBT) with a gate emitter voltage of -30V to 30V, saturated collector emitter voltage of 1.55V, a 150A to 300A DC collector current, and collector emitter voltage of 1250V.
应用
- Inverters
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