封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | Sawn Wafer |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | |
| Pb (Lead) Free | No |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | Sawn Wafer |
| Application | Inverter |
| IC (A) | 300 |
| Ic (Peak) (A) | 900 |
| MOQ | 1 |
| Nch/Pch | Nch |
| Pb (Lead) Free | No |
| Qualification Level | Automotive |
| Simulation Model Available | Yes |
| Technology | AE4 |
| Tj (°C) | 175 |
| VCE (sat) (V) | 1.4 |
| VCES (V) | 750 |
| VGE (Off) (V) | 6.5 |
| tf (Typical) (µs) | 0.122 |
| tsc (μs) | 6 |
有关 RJP6831PJWS 的资源
描述
Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in their process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching loss. This 750V/300A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.
