特性
- Fast Recovery Diode technology
- Low forward voltage
- VF = 1.9V typ. (at IF = 200A, Tj = 25°C)
- Low Switching loss
- Easy paralleling by internal Rg
描述
Renesas' Fast Recovery Diodes (FRD) achieve low forward voltage and fast and soft recovery characteristics with ultra-thin wafer and lifetime control technology. This 1200V/200A diode is optimized for high-power applications such as inverters.
应用
- High speed switching
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