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18-Mbit QDR™ II SRAM 2-word Burst

封装信息

Pkg. Type LBGA
Pkg. Code pkg_6857
Lead Count (#) 165
Pkg. Dimensions (mm) 15 x 13 x 1.4

环境和出口类别

Moisture Sensitivity Level (MSL) 3
ECCN (US) 5A002
RoHS (RMQS2A1836DGBA-332#AC0) 英语日文
Pb (Lead) Free Yes
HTS (US)

产品属性

Pkg. Type LBGA
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Architecture QDR-II
Burst Length (Words) 2
Data Width (bits) 36000
Density (Kb) 18000
Frequency (Max) (MHz) 300
Lead Compliant No
Lead Count (#) 165
Length (mm) 15
MIN Frequency (MHz) 120
MOQ 1
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 15 x 13 x 1.4
Read Latency (Clock) 1.5
Tape & Reel No
Thickness (mm) 1.4
Width (mm) 13

描述

The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.