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18-Mbit QDR™ II SRAM 4-word Burst

封装信息

CAD 模型:View CAD Model
Pkg. Type:LBGA
Pkg. Code:pkg_6857
Lead Count (#):165
Pkg. Dimensions (mm):15 x 13 x 1.4
Pitch (mm):1

环境和出口类别

Moisture Sensitivity Level (MSL)3
RoHS (RMQS3A1836DGBA-302#AC0)英语日文
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

产品属性

Pkg. TypeLBGA
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
ArchitectureQDR-II
Burst Length (Words)4
Data Width (bits)36000
Density (Kb)18000
Frequency (Max) (MHz)333
Lead CompliantNo
Lead Count (#)165
Length (mm)15
MIN Frequency (MHz)120
MOQ1
Pb (Lead) FreeYes
Pkg. Dimensions (mm)15 x 13 x 1.4
Read Latency (Clock)1.5
Tape & ReelNo
Thickness (mm)1.4
Width (mm)13

描述

The RMQS3A1836DGBA is a 524, 288-word by 36-bit and the RMQS3A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.