概览
描述
The ISL71441SLH is a radiation hardened PWM input 12V half-bridge GaN FET driver that drives low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver.
The ISL71441SLH can interface directly to the ISL73847SLH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails.
特性
- Qualified to Renesas Rad Hard Plastic Production and QCI Flow (R34ZZ0006EU)
- All screening and QCI is in accordance with SAE AS6294/1
- Up to 20V bootstrap voltage half-bridge driver
- Programmable 4.5V to 5.5V gate drive voltage
- Single tri-level PWM input control
- Separate source and sink driver outputs
- High-side peak drive: 2A Sourcing, 4A Sinking
- Low-side peak drive: 4A Sourcing, 8A Sinking
- High and low-side programmable dead time control
- Highly matched fast propagation delay: 29ns
- Full military temperature operation: TA = -55°C to 125°C ambient range
- 20Ld plastic 5x5mm QFN package
- TID Rad Hard Assurance (RHA) testing
- LDR (0.01rad(Si)/s): 75krad(Si)
- SEE characterization
- No DSEE with VDD = 20V, PHS = 13.5V, PVCC = 6.5V, and AVCC = 6.3V at LET = 86MeV•cm2/mg
- SEFI <10µm2 at LET = 86MeV•cm2/mg
- No half bridge shoot-through SET at LET = 86MeV•cm2/mg
产品对比
应用
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 1.43 MB | |
| 其他 | ||
| 报告 | PDF 5.95 MB | |
| 报告 | PDF 567 KB | |
| 技术摘要 | PDF 229 KB | |
| 应用说明 | PDF 224 KB | |
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设计和开发
软件与工具
软件与工具
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| iSim:PE 离线模拟工具 iSim Personal Edition（iSim:PE ）可加快设计周期并降低项目早期风险，确定可用于当前和下一代设计的部件。
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Simulator | 瑞萨电子 |
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开发板与套件
评估
ISL71441M GaN FET Half-Bridge Driver Evaluation Board
The ISL71441MEV1Z evaluation board features the ISL71441M 12V GaN FET half-bridge driver.
The ISL71441M is a radiation tolerant PWM input 12V half-bridge GaN FET driver designed to drive low rDSON Gallium Nitride (GaN) FETs for DC/DC switching regulators. An integrated programmable GaN FET...
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演示
Radiation Tolerant Compact Dual Phase 12V to 1V, 50A Capable Power Supply Demonstration Board
The ISL73847MDEMO1Z demonstration board demonstrates the performance of the ISL73847M dual-phase buck controller. The board is optimized for a 4.5V to 15V input operation to generate a 50A max, 1V output.
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演示
Power Management Reference Design for AMD Versal XQRVC1902
The ISLVERSALDEMO2Z demo board provides the power management for the AMD Xilinx Space Grade Versal ACAP AI Core VC1902 using Renesas' Radiation Hardened Power Management devices. The Versal ACAP system requires various supply rails, including the core, digital, analog, and DDR memory. The...
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演示
Radiation Tolerant Compact Single Phase 12V to 1V, 25A Capable Power Supply Demonstration Board
The ISL73847MDEMO2Z demonstration board demonstrates the performance of the ISL73847M dual-phase buck controller in single-phase mode. The board is optimized for a 4.5V to 15V input operation to generate a 25A max, 1V output.
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参考设计
Power Management Reference Design for AMD Versal XQRVE2302
The ISLVERSALDEMO3Z is a comprehensive power management reference design tailored to meet the needs of the XQRVE2302, AMD’s Versal AI Edge Adaptive SoC. The XQRVE2302 integrates advanced AMD AI Engine (AIE) technology, known as AIE-ML, delivering superior performance for machine learning...
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