跳转到主要内容
瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

描述

The ISL71441MEV1Z evaluation board evaluates the performance of the ISL71441M 12V GaN FET half-bridge driver in an open-loop buck configuration. The evaluation board includes the GaN FET half-bridge driver, Renesas GaN FETs, and a buck converter power stage inductor and output capacitors.

The ISL71441M is a radiation tolerant PWM input 12V half-bridge GaN FET driver designed to drive low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver. The ISL71441M can interface directly to the ISL73847M dual-phase PWM buck controller to create a high-efficiency point-of-load (POL) regulator to power many of the latest low voltage, high current FPGA and DSP digital core rails.

特性

  • 4.75V to 13.2V VDD power supply range
  • 300kHz to 1MHz PWM frequency (external component limited)
  • Buck output load current up to 25A

应用

类型 文档标题 日期
手册 - 开发工具 PDF 1.26 MB
PCB 设计文件 ZIP 1.42 MB
2 项目
Part NumberStatusStockSampleablePb (Lead) FreeECCN (US)HTS (US)
ISL71441MEV1ZActiveOut of StockAvailableYesEAR998473.30.1180
支持社区

支持社区

在线询问瑞萨电子工程社群的技术人员,快速获得技术支持。
浏览文章

知识库

浏览我们的知识库,获取文章、常见问题解答及其他实用资源。
提交工单

提交工单

需要咨询技术性问题或提供非公开信息吗?