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TSE2004GB2C0

过时

DDR4 Temp Sensor with SPD

特性

  • Temperature Sensor + 512 byte serial EEPROM
  • 512 byte serial EEPROM for SPD
  • Single supply: 2.2V to 3.6V
  • Accurate timeout support
    • Meets strict SMBus spec of 25ms (min), 35ms (max)
  • Timeout supported for Temp Sensor and EEPROM
  • Timeout supported in all modes
    • Active mode for Temp Sensor and EEPROM
    • EEPROM in standby or Temp Sensor in shutdown
    • EEPROM in standby and Temp Sensor in shutdown
  • Schmitt trigger and noise filtering on bus inputs
  • 2-wire serial interface: 10kHz to 1MHz max I2C™ /SMBus™
  • Available package: 8-TDFN
TSE2004GB2C0 Memory Module Temperature Sensor Application Diagram
TSE2004GB2C0 Memory Module Temperature Sensor Application Diagram

描述

The TSE2004GB2C0 is a digital temperature sensor with integrated 4 Kbit EEPROM for memory modules. It features accuracy up to ±0.5°C and is designed to target applications demanding the highest level of temperature readout.

Part NumberStatusSamplesStockPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Pb (Lead) FreePb Free CategoryTemp. Range (°C)
TSE2004GB2C0NCG8ObsoleteN/AIn StockDFN8#Reel1Yese3 Sn0 to 70°C
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筛选

    推荐文档 (1)

  1. 数据手册
    英语
    TSE2004GB2C0 Datasheet
    RECOMMENDED
    PDF 5.24 MB 7WDXRDKU4E7E-5-61611 2022年12月15日

    数据手册 (1)

  1. 数据手册
    英语
    TSE2004GB2C0 Datasheet
    RECOMMENDED
    PDF 5.24 MB 7WDXRDKU4E7E-5-61611 2022年12月15日

    应用说明和白皮书 (1)

  1. 白皮书
    英语
    IDT DDR4 LRDIMMs Let You Have It All
    PDF 1.08 MB 7WDXRDKU4E7E-6-11138 2016年2月09日
    With the introduction of 8Gb DRAMs, Load-Reduced DIMMs (LRDIMMs) now outperform Registered DIMMs (RDIMMs) by offering both higher memory capacity and bandwidth. This paper demonstrates how 32GB 2Rx4 LRDIMMs based on 8Gb DDR4 DRAMs provide a superior solution for enterprise servers requiring deep memory and fast data access.

    产品通告（产品变更、EOL 等） (2)

  1. EOL 通告
    英语
    PLC# : 230010 End-of-Life (EOL) process on select part numbers
    PDF 1.11 MB 2023年8月01日
  2. 产品变更通告
    英语
    PCN# : A1804-01 Add Alternate Assembly, Test and Backend location
    PDF 964 KB 7WDXRDKU4E7E-5-62840 2018年4月18日
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A white paper authored by IDT (acquired by Renesas) and Micron details research into memory and bandwidth for today's high-performance servers. LRDIMMS and RDIMMS traditionally have been seen as complementary, with the former targeting applications requiring deeper memory and the latter for applications requiring higher bandwidth. 

The introduction of 8-gigabit DRAMS has resulted in a growing number of Internet applications benefiting from both deeper memories and higher bandwidth. This paper shows how 32 GB 2RX4 LRDIMMs transcend similar RDIMMs to meet the needs of today’s data center enterprise servers, by providing an optimal combination of deeper memory and higher data bandwidth, even at mainstream module densities.

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