特性
- VDSS = −30 V (TA = 25°C)
- Low on-state resistance
RDS(on) = 2.8 mΩ MAX. (VGS = −10 V, ID = −46 A)
RDS(on) = 5.7 mΩ MAX. (VGS = −4.5 V, ID = −23 A) - 4.5 V Gate-drive available
- Thin type surface mount package with heat spreader
- Halogen free
描述
MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.
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