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64k, 8k x 8 Bit; 5 Volt, Byte Alterable EEPROM

封装信息

Pkg. Code EWT
Pitch (mm) 2.54
Lead Count (#) 28
Pkg. Type PDIP
Pkg. Dimensions (mm) 35.56 x 13.97 x 4.06

环境和出口类别

Moisture Sensitivity Level (MSL) Not Applicable
ECCN (US) EAR99
HTS (US) 8542320051
RoHS (X28HC64PIZ-12) 下载
Pb (Lead) Free Yes

产品属性

Carrier Type Tube
Moisture Sensitivity Level (MSL) Not Applicable
Country of Assembly Taiwan
Country of Wafer Fabrication United States
Price (USD) | 1ku 18.86309
Access Time (ns) 120
Family Name Byte Alterable EEPROM
Interface Parallel
Lead Count (#) 28
Length (mm) 35.6
MOQ 936
Memory Capacity (kbit) 64
Organization (bit) x 8
Organization (kword) 32
Pb (Lead) Free Yes
Pb Free Category Pb-Free 100% Matte Tin Plate w/Anneal-e3
Pitch (mm) 2.5
Pkg. Dimensions (mm) 35.6 x 14.0 x 4.06
Pkg. Type PDIP
Supply Voltage (V) 4.5 - 5.5
Temp. Range -40 to +85°C
Thickness (mm) 4.06
Width (mm) 14

描述

The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DATA Polling and Toggle Bit Polling, two methods providing early end of write detection. In addition, the X28HC64 includes a user-optional software data protection mode that further enhances Intersil’s hardware write protect capability. Intersil EEPROMs are designed and tested for applications requiring extended endurance. Inherent data retention is greater than 100 years.