概览

描述

The NP15P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

特性

  • Super low on-state resistance RDS(on)1 = 70 mΩ MAX. (VGS = −10 V, ID = −7.5 A) RDS(on)2 = 95 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
  • Low input capacitance Ciss = 1100 pF TYP.
  • Built-in gate protection diode

文档

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数据手册
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应用文档
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手册
PDF224 KB
Product Reliability Report

设计和开发

模块

模块

Title Type Date 升序排列
模型 - SPICE

支持