概览

描述

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

特性

  • Low on-state resistance RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
  • Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

应用

文档

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数据手册
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应用文档
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手册
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Product Reliability Report

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