特性
- Super low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
- Low input capacitance Ciss = 3200 pF TYP.
- Built-in gate protection diode
描述
The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Pch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-252 / DPAK |
| Gate Level | Logic |
| VDSS (Max) (V) | -60 |
| ID (A) | -36 |
| RDS (ON) (Max) @10V (mohm) | 30 |
| RDS (ON) (Max) @4.5V (mohm) | 40 |
| Pch (W) | 56 |
| Ciss (Typical) (pF) | 3200 |
| Qg typ (nC) | 52 |
| Series Name | NP Series |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-3ZK | 6 x 6 x 2.65 | 3 |
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