概览
简介
The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
特性
- Super low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
- Low input capacitance Ciss = 3200 pF TYP.
- Built-in gate protection diode
产品对比
应用
文档
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类型 | 文档标题 | 日期 |
数据手册 | PDF 1.50 MB | |
应用文档 | PDF 3.23 MB 日文 | |
指南 | PDF 1.71 MB | |
Product Reliability Report | PDF 224 KB | |
应用文档 | PDF 648 KB 日文 | |
手册 | PDF 2.24 MB | |
6 items
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设计和开发
模型
ECAD 模块
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
![Diagram of ECAD Models](/themes/idt8/images/ecad-models.jpg)