概览

描述

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

特性

  • Super low on-state resistance RDS(on) = 9.6 mΩ MAX. (VGS = 10 V, ID = 23 A)
  • Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified

应用

文档

文档标题 类型 日期
PDF281 KB
数据手册
PDF3.23 MB
应用文档
PDF2.24 MB
手册
PDF226 KB
Product Reliability Report

设计和开发

模块

支持