概览

描述

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性

  • Logic level operation (3 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Hysteresis type shut down operation.
  • High density mounting.
  • Built-in the current limitation circuit.
  • Power supply voltage applies 12 V and 24 V.
  • AEC-Q101compliant.

文档

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