概览

简介

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性

  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Power supply voltage applies 12 V and 24 V.
  • AEC-Q101 Compliant

文档

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日期 日期
PDF 89 KB 日文 数据手册
PDF 3.23 MB 日文 应用文档
PDF 648 KB 日文 应用文档
PDF 6.61 MB 手册
PDF 2.24 MB 手册
PDF 1.32 MB 手册
PDF 4.86 MB 日文 产品变更通告
PDF 3.74 MB 日文 产品变更通告
PDF 1.46 MB 日文 产品变更通告
PDF 2.71 MB 应用文档
PDF 11.56 MB 手册
11 items

设计和开发

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