特性
- Single 3V supply: 2.4V to 3.6V
- Access time:
- Power supply voltage from 2.7V to 3.6V: 45ns (max.)
- Power supply voltage from 2.4V to 2.7V: 55ns (max.)
- Current consumption:
- Standby: 0.45µA (typ.)
- Equal access and cycle times
- Common data input and output: Three-state output
- Directly TTL compatible: All inputs and outputs
- Battery backup operation
描述
The RMLV0808BGSB is an 8-Mbit static RAM organized as 1, 048, 576-word × 8-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0808BGSB realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 44-pin TSOP (II) package.
产品参数
| 属性 | 值 |
|---|---|
| Memory Density | 8M |
| Organization | 1M x 8 |
| Access Time (ns) | 45 |
| Supply Voltage (V) | - |
| Temp. Range (°C) | -40 to +85 |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| TSOP(44) | 18 x 10 x 1.2 | 44 |