IGBT 1250V 30A Wafer
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概览
特性
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Tc = 25°C)
- High-Speed switching
- Short circuit withstands time (10 μs min.)
文档
| Document title | Document type
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日期 日期 | |
|---|---|---|---|
| PDF 110 KB | 数据手册 | ||
| PDF 648 KB 日文 | 应用文档 | ||
| PDF 506 KB 日文 | 应用文档 | ||
| PDF 941 KB 日文 | 应用文档 | ||
| PDF 1.05 MB 日文 | 应用文档 | ||
| PDF 4.91 MB 日文 | 手册 | ||
| PDF 1.92 MB | 手册 | ||
| PDF 1.32 MB | 手册 | ||
| PDF 3.28 MB | 手册 | ||
| PDF 11.56 MB | 手册 | ||
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设计和开发
模型
ECAD 模块
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
产品选择
Processing table
| Wafer |
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