特性
- Directly driven by a 4.5 V power source.
- Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = -10 V, ID = -100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = -4.5 V, ID = -50 mA)
描述
Support is limited to customers who have already adopted these products.
The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4. 5 V power source.
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