特性
- Super low on-state resistance:
RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A)
RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A) - Low input capacitance:
Ciss = 1900 pF TYP. (VDS = −10 V, VGS = 0 V) - Built-in gate protection diode
描述
The 2SJ603-Z is a Pch Single Power Mosfet -60V -25A 48Mohm Mp-25Z/To-220Smd.
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