概览
描述
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The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4. 0 V power source.
特性
- Directly driven by a 4.0 V power source.
- Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
产品对比
应用
设计和开发
模型
ECAD 模块
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