特性
- Low on-resistance
RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A)
RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A) - Low Ciss : Ciss = 1300 pF (TYP.)
- Built-in gate protection diode
描述
The 2SK3365 is a Nch Single Power Mosfet 30V 30A 14Mohm Mp-3/To-251.
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