特性
- Low on-resistance
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A)
RDS(on)3 = 14.0 mΩ MAX. (VGS = 4.0 V, ID = 18 A) - Low Ciss : Ciss = 2800 pF TYP.
- Built-in gate protection diode
描述
The 2SK3367-Z is a Nch Single Power Mosfet 30V 36A 9.0Mohm Mp-3Z/To-252.
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