特性
- Super low on-state resistance:
RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 42 A) - Low Ciss : Ciss = 11000 pF TYP.
- Built-in gate protection diode
描述
The 2SK3479 is a Nch Single Power Mosfet 100V 83A 11Mohm Mp-25/To-220Ab.
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