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瑞萨电子 (Renesas Electronics Corporation)
256K x 36 Synchronous Bank-Switchable Dual-Port SRAM

封装信息

CAD 模型:View CAD Model
Pkg. Type:PQFP
Pkg. Code:DR208
Lead Count (#):208
Pkg. Dimensions (mm):28.0 x 28.0 x 3.5
Pitch (mm):0.5

环境和出口类别

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)3
ECCN (US)
HTS (US)

产品属性

Lead Count (#)208
Pb (Lead) FreeNo
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
ArchitectureBankSwitchable
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)9216
FunctionJTAG
I/O Frequency (MHz)166 - 166
I/O Type3.3 V LVTTL, 2.5 V LVTTL
InterfaceSync
Length (mm)28
MOQ12
Organization256K x 36
Output TypeFlowthrough, Pipelined
Package Area (mm²)784
Pb Free Categorye0
Pitch (mm)0.5
Pkg. Dimensions (mm)28.0 x 28.0 x 3.5
Pkg. TypePQFP
Qty. per Carrier (#)24
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)0 to 70°C
Thickness (mm)3.5
Width (mm)28
已发布No

描述

The 70V7519 is a high-speed 256K x 36 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.