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3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

封装信息

CAD 模型:View CAD Model
Pkg. Type:TQFP
Pkg. Code:PKG100
Lead Count (#):100
Pkg. Dimensions (mm):20.0 x 14.0 x 1.4
Pitch (mm):0.65

环境和出口类别

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)EAR99
HTS (US)8542.32.0041

产品属性

Lead Count (#)100
Pb (Lead) FreeYes
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
Country of AssemblyTAIWAN
Country of Wafer FabricationTAIWAN, USA
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)4608
I/O Frequency (MHz)150 - 150
I/O Voltage (V)3.3 - 3.3
Length (mm)20
MOQ144
Organization128K x 36
Output TypePipelined
Package Area (mm²)280
Pb Free Categorye3 Sn
Pitch (mm)0.65
Pkg. Dimensions (mm)20.0 x 14.0 x 1.4
Pkg. TypeTQFP
Price (USD)$9.27056
Qty. per Carrier (#)72
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.4
Width (mm)14
已发布No

描述

The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.