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瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

特性

  • High system speed 150MHz (3.8ns clock access time)
  • LBO input selects interleaved or linear burst mode
  • Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)
  • 3.3V core power supply
  • Power down controlled by ZZ input
  • 3.3V I/O
  • Available in 100-pin TQFP package

描述

The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

产品参数

属性
Density (Kb)4608
Bus Width (bits)36
Core Voltage (V)3.3
Pkg. CodePKG100
Organization128K x 36
I/O Voltage (V)3.3 - 3.3
I/O Frequency (MHz)133 - 133, 150 - 150
Temp. Range (°C)-40 to 85°C, 0 to 70°C
ArchitectureSynch Burst
Output TypePipelined

封装选项

Pkg. TypePkg. Dimensions (mm)Lead Count (#)Pitch (mm)
TQFP20.0 x 14.0 x 1.41000.65
Part NumberStatusSamplesStockPackageBudgetary Price (USD)Lead Count (#)Temp. GradePb (Lead) FreeCarrier TypeMoisture Sensitivity Level (MSL)Country of AssemblyCountry of Wafer Fabrication
71V3576S133PFGActiveN/AOut of StockTQFP1ku | $4.52100#CYesTray3TAIWANTAIWAN, USA
71V3576S133PFGIActiveN/AIn StockTQFP1ku | $5.35100#IYesTray3TAIWANTAIWAN, USA
71V3576S150PFGIActiveN/AOut of StockTQFP1ku | $5.35100#IYesTray3TAIWANTAIWAN, USA
71V3576S133PFG8ObsoleteN/AOut of StockTQFP100#CYesReel3
71V3576S133PFGI8ObsoleteN/AOut of StockTQFP100#IYesReel3
71V3576S150PFGObsoleteN/AIn StockTQFP100#CYesTray3
71V3576S150PFG8ObsoleteN/AOut of StockTQFP100#CYesReel3
71V3576S150PFGI8ObsoleteN/AOut of StockTQFP100#IYesReel3
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