跳转到主要内容
瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

特性

  • Fast access time 7.5ns up to 117MHz clock frequency
  • LBO input selects interleaved or linear burst mode
  • Self-timed write cycle with global write control (GW), byte write
  • Enable (BWE), and byte writes (BWx)
  • 3.3V core power supply
  • Power down controlled by ZZ input
  • 3.3V I/O
  • Available in a 100-pin TQFP package

描述

The 71V3579 3.3V CMOS SRAM is organized as 256K x 18 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Part NumberStatusSamplesStockPackageLead Count (#)Temp. GradePb (Lead) FreeCarrier TypeMoisture Sensitivity Level (MSL)
71V3579S65PFGObsoleteN/AIn StockTQFP100#CYesTray3
71V3579S65PFG8ObsoleteN/AOut of StockTQFP100#CYesReel3
71V3579S75PFGObsoleteN/AIn StockTQFP100#CYesTray3
71V3579S75PFG8ObsoleteN/AOut of StockTQFP100#CYesReel3
71V3579S75PFGIObsoleteN/AIn StockTQFP100#IYesTray3
71V3579S75PFGI8ObsoleteN/AOut of StockTQFP100#IYesReel3
71V3579S80PFGObsoleteN/AOut of StockTQFP100#CYesTray3
71V3579S80PFG8ObsoleteN/AOut of StockTQFP100#CYesReel3
71V3579S80PFGIObsoleteN/AIn StockTQFP100#IYesTray3
71V3579S80PFGI8ObsoleteN/AOut of StockTQFP100#IYesReel3
71V3579S85PFGObsoleteN/AIn StockTQFP100#CYesTray3
71V3579S85PFG8ObsoleteN/AOut of StockTQFP100#CYesReel3
71V3579S85PFGIObsoleteN/AOut of StockTQFP100#IYesTray3
71V3579S85PFGI8ObsoleteN/AOut of StockTQFP100#IYesReel3