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瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

特性

  • High system speed 4.5ns clock access time (117 MHz)
  • Single-cycle deselect functionality (Compatible with
  • Micron Part # MT58LC64K32D7LG-XX)
  • LBO input selects interleaved or linear burst mode
  • Self-timed write cycle with global write control (GW), byte
  • write enable (BWE), and byte writes (BWx)
  • Power down controlled by ZZ input
  • Operates with a single 3.3V power supply (+10/-5%)
  • Available in 100-pin TQFP package

描述

The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.
Part NumberStatusSamplesStockPackageLead Count (#)Temp. GradePb (Lead) FreeCarrier Type
71V632S5PFGObsoleteN/AOut of StockTQFP100#CYesTray
71V632S5PFG8ObsoleteN/AOut of StockTQFP100#CYesReel
71V632S5PFGIObsoleteN/AIn StockTQFP100#IYesTray
71V632S5PFGI8ObsoleteN/AOut of StockTQFP100#IYesReel
71V632S6PFGObsoleteN/AIn StockTQFP100#CYesTray
71V632S6PFG8ObsoleteN/AOut of StockTQFP100#CYesReel
71V632S6PFGIObsoleteN/AOut of StockTQFP100#IYesTray
71V632S6PFGI8ObsoleteN/AOut of StockTQFP100#IYesReel
71V632S7PFGObsoleteN/AOut of StockTQFP100#CYesTray
71V632S7PFG8ObsoleteN/AOut of StockTQFP100#CYesReel
71V632S7PFGIObsoleteN/AOut of StockTQFP100#IYesTray
71V632S7PFGI8ObsoleteN/AOut of StockTQFP100#IYesReel