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瑞萨电子 (Renesas Electronics Corporation)
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flow-Through SRAM

封装信息

CAD 模型:View CAD Model
Pkg. Type:CABGA
Pkg. Code:BQG165
Lead Count (#):165
Pkg. Dimensions (mm):15.0 x 13.0 x 1.2
Pitch (mm):1

环境和出口类别

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

产品属性

Lead Count (#)165
Pb (Lead) FreeYes
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
ArchitectureZBT
Bus Width (bits)36
Core Voltage (V)3.3
Cycle Time (ns)85
Density (Kb)9216
I/O Voltage (V)2.5 - 2.5
Length (mm)15
MOQ272
Organization256K x 36
Output TypeFlowthrough
Package Area (mm²)195
Pb Free Categorye1 SnAgCu
Pitch (mm)1
Pkg. Dimensions (mm)15.0 x 13.0 x 1.2
Pkg. TypeCABGA
Price (USD)$23.80184
Qty. per Carrier (#)136
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.2
Width (mm)13

描述

The 71V65703 3.3V CMOS SRAM, organized as 256K x 36, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65703 contains address, data-in, and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.