特性
- Single 2.3V - 3.6V Supply
- Serial Peripheral Interface (SPI) Compatible
- Supports SPI Modes 0 and 3
- Supports Dual Output Read
- 104MHz Maximum Operating Frequency
- Clock-to-Output (tV) of 6ns
- Flexible, Optimized Erase Architecture for Code + Data Storage Applications
- Small (256-Byte) Page Erase
- Uniform 4-Kbyte Block Erase
- Uniform 32-Kbyte Block Erase
- Full Chip Erase
- Hardware Controlled Locking of Protected Sectors via WP Pin
- 128-Byte Programmable OTP Security Register
- 64 bytes factory programmed with a unique identifier
- 64 bytes user programmable
- Flexible Programming
- Byte/Page Program (1 to 256 Bytes)
- Fast Program and Erase Times
- 1.25ms Typical Page Program (256 Bytes) Time
- 35ms Typical 4-Kbyte Block Erase Time
- 250ms Typical 32-Kbyte Block Erase Time
- Automatic Checking and Reporting of Erase/Program Failures
- Software Controlled Reset
- JEDEC Standard Manufacturer and Device ID Read Methodology
- Low Power Dissipation
- 350nA Ultra-Deep Power-Down Current (Typical)
- 7.5μA Deep Power-Down Current (Typical)
- 25µA Standby Current (Typical)
- 6mA Active Read Current (Typical)
- Endurance: 100,000 Program/Erase Cycles
- Data Retention: 20 Years
- Complies with Full Industrial Temperature Range
- Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
- 8-lead SOIC (150-mil)
- 8-pad Ultra-Thin DFN (2mm x 3mm x 0.6mm)
- 8-lead TSSOP Package
描述
The AT25DN512C is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DN512C, with its page erase granularity, is ideal for data storage as well, eliminating the need for additional data storage devices.
产品参数
| 属性 | 值 |
|---|---|
| Memory Class | FusionHD |
| Memory Density | 512 Kbit |
| Operating Voltage Range (V) | 2.3 - 3.6 |
| Speed | 104 MHz |
| Interface | Single, Dual SPI |
| Temp. Range (°C) | -40 to +85°C |
| Deep Power Down (µA) | 0.35 |
| Read Current (mA) | 6 |
| Key Benefit | Fast read, 2.3 Volt |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Pitch (mm) |
|---|---|---|
| DFN | 2 x 3 | 0.5 |
| SOIC-N | 3.81 x 4.80 | 1.27 |
| UDFN 8MA3 - 2x3 | — | — |
