特性
- Includes a controllable R/W SRAM buffer for maximum flexibility
- Standard block architecture with added 256-byte page erase for energy-efficient data logging
- Byte-write provides Serial EEPROM functionality in a Serial NOR Flash device
- Ultra-deep power down operates at >400nA
- Extended Vcc operation allows the system memory to operate over the entire voltage range
- Comprehensive security and unique ID features protect the device from outside tampering
描述
The AT45DB021E DataFlash is a member of our system-enhancing class of code and data storage solutions designed with an advanced SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.
产品参数
| 属性 | 值 |
|---|---|
| Memory Class | DataFlash |
| Memory Density | 2 Mbit |
| Operating Voltage Range (V) | - |
| Speed | 85 MHz |
| Interface | Single SPI |
| Temp. Range (°C) | -40 to +85°C |
| Deep Power Down (µA) | 0.2 |
| Read Current (mA) | 4.5 |
| Key Benefit | Includes controllable SRAM |