特性
- Less than 0.15 in2 (0.97 cm2) footprint for the complete 1A converter
- Components on one side of PCB
- Max height 1.1mm MSOP10
- Power-Good (PG) output
- Internally-compensated voltage mode controller
- Up to 94% efficiency
- <1µA shut-down current
- 120µA quiescent current
- Overcurrent and over-temperature protection
- External synchronizable up to 12MHz
- Pb-Free plus anneal available (RoHS compliant)
EL7531 Functional Diagram
描述
The EL7531 is a synchronous, integrated FET 1A step-down regulator with internal compensation. It operates with an input voltage range from 2. 5V to 5. 5V, which accommodates supplies of 3. 3V, 5V, or a Li-Ion battery source. The output can be externally set from 0. 8V to VIN with a resistive divider. The EL7531 features automatic PFM/PWM mode control, or PWM mode only. The PWM frequency is typically 1. 4MHz and can be synchronized up to 12MHz. The typical no load quiescent current is only 120µA. Additional features include a Power-Good output, 1µA shut-down current, short-circuit protection, and over-temperature protection. The EL7531 is available in the 10-pin MSOP package, making the entire converter occupy less than 0. 15 in2 of PCB area with components on one side only. The 10-pin MSOP package is specified for operation over the full -40°C to +85°C temperature range.
应用方框图
 | 打印机电源排序器和 I/O 扩展器（PPC 或 MFP） 基于 MCU 的电源定序器和 I/O 扩展器，适用于高性能 PPC 或 MFP 打印机。 |
其他应用
- PDA and pocket PC computers Bar code readers Cellular phones Portable test equipment Li-Ion battery powered devices Small form factor (SFP) modules
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| EL7531IYZ | Obsolete | N/A | Out of Stock | RoHS:EN | MSOP | 10# | Tube | 2 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| EL7531IYZ-T13 | Obsolete | N/A | Out of Stock | RoHS:EN | MSOP | 10# | Reel | 2 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| EL7531IYZ-T7 | Obsolete | N/A | In Stock | RoHS:EN | MSOP | 10# | Reel | 2 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
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- 应用说明英语PDF 592 KB an9208 2018年2月01日AI 生成的摘要: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- EOL 通告英语PDF 203 KB PLC15033A 2016年1月08日
- EOL 通告英语PDF 200 KB PLC15033 2015年6月11日
- 产品变更通告英语PDF 117 KB PCN11059 2011年6月17日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 650 KB an9210 2001年12月21日AI 生成的摘要: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- 应用说明英语PDF 387 KB an9209 1998年8月13日AI 生成的摘要: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.
- 应用说明英语PDF 349 KB an7244 1998年8月12日AI 生成的摘要: Power MOSFETs feature a positive temperature coefficient of resistance, enhancing stability and preventing thermal runaway by increasing resistance as temperature rises. Their gate terminals have extremely high input impedance with minimal leakage current, dominated by capacitive characteristics. Switching speed depends on gate resistance and capacitance, with polysilicon gates offering higher resistance and lower frequency operation than metal gates. MOSFETs require a gate-to-source voltage exceeding a threshold (around 2V) and typically about 10V to fully saturate and deliver maximum drain current. TTL and CMOS drivers differ in voltage capability and switching speed, often requiring buffering for optimal performance.
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- 应用说明英语PDF 592 KB an9208 2018年2月01日AI 生成的摘要: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 650 KB an9210 2001年12月21日AI 生成的摘要: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- 应用说明英语PDF 387 KB an9209 1998年8月13日AI 生成的摘要: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.查看更多 (6)
应用说明和白皮书 (6)
- EOL 通告英语PDF 203 KB PLC15033A 2016年1月08日
- EOL 通告英语PDF 200 KB PLC15033 2015年6月11日
- 产品变更通告英语PDF 117 KB PCN11059 2011年6月17日
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