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瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

特性

  • Logic level operation (4V to 6V Gate drive)
  • High endurance capability against to the short circuit
  • Built-in the over-temperature shut-down circuit
  • Latch type shut-down operation (Needs 0 voltage recovery)

描述

The HAF2002 Silicon N-Channel MOSFET has over-temperature shut-down capability sensing to the junction temperature. The device offers a built-in over-temperature shut-down circuit in the gate area. And, also provides the circuit operation to shut down the gate voltage in case of high junction temperature like applying over power consumption, over current, etc.

Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier TypePb (Lead) Free
HAF2002ObsoleteN/AOut of StockRoHS:EN
RoHS:JA
TO220FM3#BagNo
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