特性
- NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
- NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
- NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
- PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
- PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
- PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V
- Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
- Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA
- Complete isolation between transistors
- Pin compatible with industry standard 3XXX series arrays
- Pb-free (RoHS compliant)
HFA30x6_HFA312x Functional Diagram
描述
The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.
产品参数
| 属性 | 值 |
|---|---|
| Rating | Harsh Environment |
| NPN Transistors (#) | 5 |
| Temp. Range (°C) | -55 to +125°C |
| Flow | Harsh Environment & MIL-STD-883 |
| Qualification Level | Standard |
| Die Sale Availability? | No |
| PROTO Availability? | No |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) | Pitch (mm) |
|---|---|---|---|
| SOICN | 8.7 x 3.9 x 0.00 | 14 | 1.3 |
应用
- VHF/UHF Amplifiers
- VHF/UHF Mixers
- IF Converters
- Synchronous Detectors
| Part Number | Status | Samples | Stock | RoHS | Package | Budgetary Price (USD) | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Has environmental docs | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) | Country of Assembly | Country of Wafer Fabrication |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HFA3046BZ | Active | Available | In Stock | RoHS:EN | SOICN | 1u | $13.39 | 14# | Tube | 3 | Yes | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -55 to +125°C | PHILIPPINES, MALAYSIA | USA |
| HFA3046BZ96 | Obsolete | N/A | Out of Stock | Contact | SOICN | 14# | Reel | 3 | No | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -55 to +125°C |
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- 涨价通告英语PDF 257 KB PIN19006 2019年3月01日
- 应用说明英语PDF 338 KB mm3046 2018年5月08日AI 生成的摘要: SPICE transistor models for HFA3046, HFA3096, HFA3127, and HFA3128 Ultra High Frequency transistor arrays provide parameters for NPN and PNP bipolar transistors fabricated on a complementary bipolar UHF1 process. Models focus on typical device behavior at 25°C and include performance curves showing peak transition frequencies up to 9 GHz for NPN and 5.5 GHz for PNP transistors. Package parasitic models are included but are preliminary and should not replace physical prototyping. The models exclude temperature and breakdown effects but may be updated in future releases. PSpice listings and equivalent circuit parameters for 14- and 16-lead SOIC packages are provided to aid circuit simulation and design validation.
- EOL 通告英语PDF 200 KB PLC15033 2015年6月11日
- 产品变更通告英语PDF 152 KB PCN12085 2012年11月07日
- 应用说明英语PDF 357 KB an1694 2004年1月19日AI 生成的摘要: The document outlines the four fundamental internal blocks of an operational amplifier and presents a simple 2:1 stage circuit diagram. It includes important legal notices from Renesas Electronics regarding the use, liability, and intellectual property rights of their semiconductor products. The document clarifies product quality grades, intended applications, and restrictions on use in life-critical or hazardous systems. It emphasizes compliance with applicable laws and safety responsibilities when using Renesas products. Contact information for Renesas sales offices worldwide is also provided.
- 数据手册英语HFA3046, HFA3096, HFA3127, HFA3128 DatasheetRECOMMENDEDPDF 779 KB hfa3046-3096-3127-3128 2000年5月09日
- 应用说明英语PDF 299 KB an9744 2000年5月01日AI 生成的摘要: Linear arrays simplify RF up/down conversion by integrating multiple transistors on a single die, improving matching and reducing cost. The HFA3101 Gilbert cell, a versatile RF building block, operates as a four-quadrant multiplier used in modulators and mixers. It features symmetrical layout for stability and supports emitter degeneration to enhance linearity. Up/down converters operating around 900MHz use this cell, differing mainly in output filtering. These arrays offer flexibility, reliability, and performance in RF circuit design.
- 应用说明英语PDF 353 KB an9315 2000年5月01日AI 生成的摘要: The document details the design of high-gain, low-noise, and wideband RF amplifiers using transistor arrays such as HFA3046, HFA3096, HFA3127, and HFA3128. It emphasizes minimizing conductor length in microstrip layouts to maintain impedance and signal integrity at RF frequencies. Component evaluation using network analyzers is recommended. The wideband amplifier achieves flat 10dB gain over 600MHz bandwidth with stable temperature biasing. The high-gain amplifier demonstrates over 17dB gain and 3.9dB noise figure from 800MHz to 2.5GHz without external matching. Detailed board layouts and measured performance data support these designs.
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
- 应用说明英语PDF 268 KB an9740 1999年1月17日AI 生成的摘要: This document provides important legal and usage notices for semiconductor products, emphasizing user responsibility for product design and compliance with applicable laws. It disclaims Renesas Electronics' liability for damages from improper use, alteration, or reverse engineering. Products are categorized into Standard and High Quality grades, with specific application guidelines. Users must follow the latest product specifications and implement safety measures. Export control and environmental regulations compliance is mandatory. Contact information for Renesas Electronics sales offices worldwide is also provided.
- 数据手册英语HFA3046, HFA3096, HFA3127, HFA3128 DatasheetRECOMMENDEDPDF 779 KB hfa3046-3096-3127-3128 2000年5月09日
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- 数据手册英语HFA3046, HFA3096, HFA3127, HFA3128 DatasheetRECOMMENDEDPDF 779 KB hfa3046-3096-3127-3128 2000年5月09日
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- 应用说明英语PDF 338 KB mm3046 2018年5月08日AI 生成的摘要: SPICE transistor models for HFA3046, HFA3096, HFA3127, and HFA3128 Ultra High Frequency transistor arrays provide parameters for NPN and PNP bipolar transistors fabricated on a complementary bipolar UHF1 process. Models focus on typical device behavior at 25°C and include performance curves showing peak transition frequencies up to 9 GHz for NPN and 5.5 GHz for PNP transistors. Package parasitic models are included but are preliminary and should not replace physical prototyping. The models exclude temperature and breakdown effects but may be updated in future releases. PSpice listings and equivalent circuit parameters for 14- and 16-lead SOIC packages are provided to aid circuit simulation and design validation.
- 应用说明英语PDF 357 KB an1694 2004年1月19日AI 生成的摘要: The document outlines the four fundamental internal blocks of an operational amplifier and presents a simple 2:1 stage circuit diagram. It includes important legal notices from Renesas Electronics regarding the use, liability, and intellectual property rights of their semiconductor products. The document clarifies product quality grades, intended applications, and restrictions on use in life-critical or hazardous systems. It emphasizes compliance with applicable laws and safety responsibilities when using Renesas products. Contact information for Renesas sales offices worldwide is also provided.
- 应用说明英语PDF 299 KB an9744 2000年5月01日AI 生成的摘要: Linear arrays simplify RF up/down conversion by integrating multiple transistors on a single die, improving matching and reducing cost. The HFA3101 Gilbert cell, a versatile RF building block, operates as a four-quadrant multiplier used in modulators and mixers. It features symmetrical layout for stability and supports emitter degeneration to enhance linearity. Up/down converters operating around 900MHz use this cell, differing mainly in output filtering. These arrays offer flexibility, reliability, and performance in RF circuit design.
- 应用说明英语PDF 353 KB an9315 2000年5月01日AI 生成的摘要: The document details the design of high-gain, low-noise, and wideband RF amplifiers using transistor arrays such as HFA3046, HFA3096, HFA3127, and HFA3128. It emphasizes minimizing conductor length in microstrip layouts to maintain impedance and signal integrity at RF frequencies. Component evaluation using network analyzers is recommended. The wideband amplifier achieves flat 10dB gain over 600MHz bandwidth with stable temperature biasing. The high-gain amplifier demonstrates over 17dB gain and 3.9dB noise figure from 800MHz to 2.5GHz without external matching. Detailed board layouts and measured performance data support these designs.
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.查看更多 (7)
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- 涨价通告英语PDF 257 KB PIN19006 2019年3月01日
- EOL 通告英语PDF 200 KB PLC15033 2015年6月11日
- 产品变更通告英语PDF 152 KB PCN12085 2012年11月07日
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