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60V, 1A/2A Peak, Half-Bridge Driver with 4V UVLO

封装信息

Pitch (mm) 1.27
Lead Count (#) 8
Pkg. Dimensions (mm) 4.9 x 3.9 x 1.5
Pkg. Code MOU
Pkg. Type SOICN

环境和出口类别

Moisture Sensitivity Level (MSL) 3
Pb (Lead) Free Yes
ECCN (US) EAR99
RoHS (HIP2103FBZ-T7A) 下载
HTS (US)

产品属性

Lead Count (#) 8
Carrier Type Reel
Moisture Sensitivity Level (MSL) 3
Pitch (mm) 1.3
Pkg. Dimensions (mm) 4.9 x 3.9 x 0.00
Pb (Lead) Free Yes
Pb Free Category Pb-Free 100% Matte Tin Plate w/Anneal-e3
Temp. Range -40 to +125°C
Bootstrap Supply Voltage (Max) (V) 60
Charge Pump No
Fall Time 17
Input Logic Level 3.3V/TTL
Length (mm) 4.9
MOQ 250
Parametric Category Half-Bridge FET Drivers
Peak Pull-down Current (A) 2
Peak Pull-up Current (A) 1
Pkg. Type SOICN
Qualification Level Standard
Rise Time (μs) .021
Thickness (mm) 0
Turn-Off Prop Delay (ns) 30
Turn-On Prop Delay (ns) 28
VBIAS (Max) (V) 14
Width (mm) 3.9

描述

The HIP2103 is a half-bridge driver designed for applications using DC motors, 3-phase brushless DC motors, or other similar loads. The two inputs (HI and LI) independently control the high-side driver (HO) and the low-side driver (LO). HI and LI can be configured to enable/disable the device, which lowers the number of connections to a microcontroller and the cost. The low IDD bias current in the Sleep mode prevents battery drain when the device is not in use, which eliminates the need for an external switch to disconnect the driver from the battery. Integrated pull-down resistors on all of the inputs (LI, HI, VDen, and VCen) reduce the need for external resistors. An active-low resistance pull-down on the LO output ensures that the low-side bridge FET remains off during the Sleep mode or when VDD is below the Undervoltage Lockout (UVLO) threshold.