特性
- Adaptive shoot-through protection (HIP2106A only)
- HI and LI inputs (HIP2105 only)
- 0.4Ω ON-resistance and 4A sink current capability
- Low tri-state hold-off time (20ns) (HIP2106A only)
- Supports 3.3V and 5V HI/LI or PWM input
- Power-On Reset (POR)
- Dual Flat No-Lead (DFN) package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads - product outline
- Near chip-scale package footprint; improves PCB efficiency and thinner in profile
描述
The HIP2106A is a high frequency MOSFET driver optimized to drive two N-channel power MOSFETs in a synchronous buck converter topology. This driver, combined with Renesas multi-phase buck PWM controllers, forms a complete single-stage core-voltage regulator solution with high-efficiency performance at high switching frequency for advanced microprocessors. The HIP2106A is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented using an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The HIP2106A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The HIP2106A also features an input that recognizes a high-impedance state, working together with Renesas multi-phase 3. 3V or 5V PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be used in a power system to protect the load from negative output voltage damage.
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| HIP2106AIRZ | Obsolete | N/A | Out of Stock | RoHS:EN | DFN | 10# | Tube | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| HIP2106AIRZ-T | Obsolete | N/A | In Stock | RoHS:EN | DFN | 10# | Reel | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
- 产品变更通告英语PDF 326 KB 2021年5月21日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
推荐文档 (1)
数据手册 (1)
手册和指南 (1)
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
应用说明和白皮书 (3)
- 产品变更通告英语PDF 326 KB 2021年5月21日
产品通告(产品变更、EOL 等) (1)
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无线充电器参考设计
无线充电技术利用电磁感应原理,在两个线圈之间传输电能。 近年来,该技术已成为智能手机等移动设备中广受欢迎的功能之一。
该参考设计采用了多项功能特性,例如利用 RL78/G11 低引脚数且内部可配置模拟 MCU 的强大模拟功能实现过流监测,以及通过定时器 KB 实现 PWM 输出。 此外,ISL28006 微功率单向高/低侧电流检测放大器的宽输入电压与低功耗特性,结合 HIP2106A 高频 MOSFET 驱动器的直通电流保护功能,共同提升了应用的安全性和高效率。
注:此应用尚未获得 Qi 认证。