封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | CLCC |
| Pkg. Code: | JSB |
| Lead Count (#): | 3 |
| Pkg. Dimensions (mm): | 10.16 x 7.52 x 2.97 |
| Pitch (mm): | 3.81 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Pb (Lead) Free | No |
| ECCN (US) | 9A515.e.1 |
| HTS (US) | 8542.39.0090 |
产品属性
| Lead Count (#) | 3 |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Pitch (mm) | 3.8 |
| Pkg. Dimensions (mm) | 10.2 x 7.5 x 2.97 |
| Qualification Level | Class Q |
| DLA SMD | 5962F9954701QYC |
| Pb (Lead) Free | No |
| Pb Free Category | Gold Plate over compliant Undercoat-e4 |
| MOQ | 25 |
| Temp. Range (°C) | -55 to +125°C |
| CAGE code | 34371 |
| DSEE (MeV·cm2/mg) | 87.4 |
| Die Sale Availability? | Yes |
| Flow | RH Hermetic |
| IOUT (A) | 1.25 |
| IOUT (Max) (mA) | 1250 |
| Length (mm) | 10.2 |
| Output Options | Adjustable |
| Output Voltage (Max) (V) | 37 |
| Output Voltage (Min) (V) | 1.25 |
| PROTO Availability? | Yes |
| Pkg. Type | CLCC |
| Rating | Space |
| SMD URL | 5962-99547 |
| Supply Voltage (max) (V) | 40 - 40 |
| Supply Voltage (min) (V) | 4.25 - 4.25 |
| TID HDR (krad(Si)) | 300 |
| TID LDR (krad(Si)) | Report Available |
| Thickness (mm) | 2.97 |
| VDO @ IOUTMAX (Typ) (mV) | 4000 |
| VOUT (max) (V) | 37 |
| VOUT (min) (V) | 1.25 |
| Width (mm) | 7.5 |
有关 HS-117RH 的资源
描述
The radiation hardened HS-117RH and HS-117EH are adjustable positive voltage linear regulators capable of operating with input voltages up to 40VDC. The HS-117EH encompasses all of the production testing of the HS-117RH and additionally is tested in the Enhanced Low Dose Rate Sensitivity (ELDRS) product manufacturing flow. The output voltage is adjustable from 1.25V to 37V with two external resistors. The device is capable of sourcing from 5mA to 1.25A max (0.5A max for the TO-39 package). Current protection is provided by the on-chip thermal shutdown and output current limiting circuitry. The HS-117xH's advantage over other industry types is its incorporated circuitry that minimizes the effects of radiation and temperature on device stability. The HS-117RH and HS-117EH are constructed in the dielectrically isolated Rad Hard Silicon Gate (RSG) process and are immune to single event latch-up and are specifically designed to provide highly reliable performance in harsh radiation environments.