特性
- Electrically screened to SMD 5962-00523
- QML qualified per MIL-PRF-38535 requirements
- EH version acceptance tested to 50krad(Si) (LDR)
- Radiation environment
- High dose rate (50-300rad(Si)/s): 300 krad(Si)
- Low dose rate (0.01rad(Si)/s): 50krad(Si)
- Latch-up immune: dielectrically isolated
- Reverse breakdown voltage (VZ): 2.5V
- Change in VZ vs current (400µA to 10mA): 6mV
- Change in VZ vs temperature (-55°C to +125°C): 15mV
- Maximum reverse breakdown current: 20mA
- Stability Criteria
- Optimum stability is achieved with CL = 10µF between V+ and V- for heavy loads
- Instability region with self-sustaining oscillations is from CL = 1nF to 3µF
- Interchangeable with 1009 and 136 industry types
描述
The Star*Power™ Radiation Hardened IS-1009RH, IS-1009EH are a 2.5V shunt regulator diode is designed to provide a stable 2.5V reference over a wide current range. These devices are designed to maintain stability over the full military temperature range and over time. The 0.2% reference tolerance is achieved by on-chip trimming. An adjustment terminal is provided to allow for the calibration of system errors. The use of this terminal to adjust the reference voltage does not effect the temperature coefficient. Constructed with the Intersil dielectrically isolated EBHF process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. The IS-1009EH replaces the obsoleted IS-1009RH. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-00523.
产品参数
| 属性 | 值 |
|---|---|
| Rating | Space |
| Reference Output Voltage (V) | 2.5 |
| Temp. Range (°C) | -40 to +125°C, -55 to +125°C |
| TID HDR (krad(Si)) | 300 |
| TID LDR (krad(Si)) | 50 |
| DSEE (MeV·cm2/mg) | 80 |
| Flow | RH Hermetic |
| Qualification Level | Class V, EM |
| Die Sale Availability? | Yes |
| PROTO Availability? | Yes |
应用
- Power supply monitoring
- Reference for 5V systems
- A/D and D/A reference
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | DLA SMD | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS0-1009EH-Q | Active | N/A | Out of Stock | RoHS:EN RoHS:JA | DIE | 5962F0052302V9A | No | 100 | -55 to +125°C | ||||||
| IS0-1009EH/SAMPLE | Active | N/A | Out of Stock | Contact | DIE | No | 5 | -40 to +125°C | |||||||
| IS2-1009EH-Q | Active | N/A | In Stock | Contact | CAN | 3# | Tray | Not Applicable | 2.5mm | 5.4 x 5.4 x 0.00 | 5962F0052302VXC | Yes | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C |
| IS2-1009EH/PROTO | Active | Available | In Stock | Contact | CAN | 3# | Tray | Not Applicable | 2.5mm | 5.4 x 5.4 x 0.00 | Yes | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C | |
| ISYE-1009EH-Q | Active | N/A | In Stock | Contact | CLCC | 3# | Tube | Not Applicable | 3.8mm | 10.2 x 7.5 x 2.97 | 5962F0052302VYC | Yes | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C |
| ISYE-1009EH/PROTO | Active | Available | Out of Stock | Contact | CLCC | 3# | Tube | Not Applicable | 3.8mm | 10.2 x 7.5 x 2.97 | Yes | Gold Plate over compliant Undercoat-e4 | 1 | -55 to +125°C |
- 产品咨询英语PDF 550 KB 2021年5月19日
- 涨价通告英语PDF 360 KB PIN19011 2019年4月10日
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
推荐文档 (1)
数据手册 (1)
No Results Found.
确保所有关键词拼写正确。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
如果您使用了筛选器,请考虑取消选择某些筛选器选项以扩大搜索结果。
- 搜索我们丰富的知识库,帮助您解答常见问题
- 前往支持论坛,获取瑞萨电子技术专家和社群的帮助
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
应用说明和白皮书 (2)
- 产品咨询英语PDF 550 KB 2021年5月19日
- 涨价通告英语PDF 360 KB PIN19011 2019年4月10日
产品通告(产品变更、EOL 等) (2)
No Results Found.
确保所有关键词拼写正确。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
如果您使用了筛选器,请考虑取消选择某些筛选器选项以扩大搜索结果。
- 搜索我们丰富的知识库,帮助您解答常见问题
- 前往支持论坛,获取瑞萨电子技术专家和社群的帮助
No Results Found.
确保所有关键词拼写正确。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
如果您使用了筛选器,请考虑取消选择某些筛选器选项以扩大搜索结果。
- 搜索我们丰富的知识库,帮助您解答常见问题
- 前往支持论坛,获取瑞萨电子技术专家和社群的帮助
No Results Found.
确保所有关键词拼写正确。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
如果您使用了筛选器,请考虑取消选择某些筛选器选项以扩大搜索结果。
- 搜索我们丰富的知识库,帮助您解答常见问题
- 前往支持论坛,获取瑞萨电子技术专家和社群的帮助
No Results Found.
确保所有关键词拼写正确。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
如果您使用了筛选器,请考虑取消选择某些筛选器选项以扩大搜索结果。
- 搜索我们丰富的知识库,帮助您解答常见问题
- 前往支持论坛,获取瑞萨电子技术专家和社群的帮助
No Results Found.
确保所有关键词拼写正确。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
如果您使用了筛选器,请考虑取消选择某些筛选器选项以扩大搜索结果。
- 搜索我们丰富的知识库,帮助您解答常见问题
- 前往支持论坛,获取瑞萨电子技术专家和社群的帮助
No Results Found.
确保所有关键词拼写正确。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
如果您使用了筛选器,请考虑取消选择某些筛选器选项以扩大搜索结果。
- 搜索我们丰富的知识库,帮助您解答常见问题
- 前往支持论坛,获取瑞萨电子技术专家和社群的帮助
营销资料 (1)
其他 (5)
No Results Found.
确保所有关键词拼写正确。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
如果您使用了筛选器,请考虑取消选择某些筛选器选项以扩大搜索结果。
- 搜索我们丰富的知识库,帮助您解答常见问题
- 前往支持论坛,获取瑞萨电子技术专家和社群的帮助