特性
- Drives Two N-Channel MOSFETs
- Adaptive Shoot-Through Protection
- 0.4Ω On-Resistance and 4A Sink Current Capability
- Supports High Switching Frequency
- Fast Output Rise and Fall Time
- Ultra Low Propagation Delay 8ns
- Three-State PWM Input for Power Stage Shutdown
- Internal Bootstrap Schottky Diode
- Low Bias Supply Current (5V, 30µA)
- Enable Input
- QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile.
- Pb-Free Available (RoHS Compliant)
描述
The ISL6605 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil HIP63xx or ISL65xx Multiphase Buck PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V) and minimizes low driver switching losses for high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3000pF load with an 8ns propagation delay and less than 10ns transition time. This product implements bootstrapping on the upper gate with an internal bootstrap Schottky diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6605 features 4A typical sink current for the lower gate driver, which is capable of holding the lower MOSFET gate during the Phase node rising edge to prevent shootthrough power loss caused by the high dv/dt of the Phase node. The ISL6605 also features a Three-State PWM input that, working together with Intersil Multiphase PWM controllers, will prevent a negative transient on the output voltage when the output is being shut down. This feature eliminates the Schottky diode that is usually seen in a microprocessor power system for protecting the microprocessor from reversed-output-voltage damage.
应用
- Core Voltage Supplies for Intel® and AMD® Microprocessors
- High Frequency Low Profile DC-DC Converters
- High Current Low Voltage DC-DC Converters
- Synchronous Rectification for Isolated Power Supplies
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL6605CBZ | Obsolete | N/A | In Stock | Contact | SOICN | 8# | Tube | 1 | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C | |
| ISL6605CBZ-T | Obsolete | N/A | Out of Stock | Contact | SOICN | 8# | Reel | 1 | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C | |
| ISL6605CRZ-T | Obsolete | N/A | Out of Stock | Contact | QFN | 8# | Reel | 3 | 0.7mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6605IBZ | Obsolete | N/A | In Stock | Contact | SOICN | 8# | Tube | 1 | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C | |
| ISL6605IBZ-T | Obsolete | N/A | Out of Stock | Contact | SOICN | 8# | Reel | 1 | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C | |
| ISL6605IRZ | Obsolete | N/A | Out of Stock | RoHS:EN | QFN | 8# | Tube | 3 | 0.7mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL6605IRZ-T | Obsolete | N/A | In Stock | RoHS:EN | QFN | 8# | Reel | 3 | 0.7mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
- 产品变更通告英语PDF 326 KB 2021年5月21日
- 产品变更通告英语PDF 398 KB PCN15046 2016年1月07日
- 产品变更通告英语PDF 151 KB PCN13064 2013年11月21日
- 产品变更通告英语PDF 222 KB PCN13025B 2013年10月25日
- 产品变更通告英语PDF 77 KB PCN13026 2013年4月01日
- 产品变更通告英语PDF 207 KB PCN13013 2013年3月19日
- 产品变更通告英语PDF 108 KB PCN12068 2012年8月21日
- 产品变更通告英语PDF 248 KB PCN10055 2010年6月30日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
推荐文档 (1)
数据手册 (1)
手册和指南 (1)
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
应用说明和白皮书 (3)
- 产品变更通告英语PDF 326 KB 2021年5月21日
- 产品变更通告英语PDF 398 KB PCN15046 2016年1月07日
- 产品变更通告英语PDF 151 KB PCN13064 2013年11月21日查看更多 (12)
产品通告(产品变更、EOL 等) (12)
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