特性
- Dual MOSFET Drives for Synchronous Rectified Bridge
- Adaptive Shoot-Through Protection
- 0.5Ω On-Resistance and 4A Sink Current Capability
- Supports High Switching Frequency up to 2MHz
- Fast Output Rise/Fall Time and Low Propagation Delay
- Three-State PWM Input for Power Stage Shutdown
- Internal Bootstrap Schottky Diode
- Low Bias Supply Current (5V, 80µA)
- Diode Emulation for Enhanced Light Load Efficiency and Pre-Biased Startup Applications
- VCC POR (Power-On-Reset) Feature Integrated
- Low Three-State Shutdown Holdoff Time (Typically 160ns)
- Pin-to-Pin Compatible with ISL6605
- QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile
- Pb-free Available as an Option
描述
The ISL6608 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil HIP63xx or ISL65xx Multiphase Buck PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V) and minimizes gate drive losses due to MOSFET gate charge at high switching frequency applications. Each driver is capable of driving a 3000pF load with a low propagation delay and less than 10ns transition time. This product implements bootstrapping on the upper gate with an internal bootstrap Schottky diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6608 features 4A sink current for the lower gate driver, which is capable of holding the lower MOSFET gate during the Phase node rising edge to prevent shoot-through power loss caused by the high dv/dt of the Phase node. The ISL6608 also features a Three-State PWM input which, working together with Intersil Multiphase PWM controllers, will prevent a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is usually seen in a microprocessor power system for protecting the microprocessor from reversed output voltage events. A diode emulation feature is integrated in the ISL6608 to enhance converter efficiency at light load conditions. Diode emulation also prevents a negative transient when starting up with a pre-biased voltage on the output. When diode emulation is enabled, the driver allows discontinuous conduction mode by detecting when the inductor current reaches zero and subsequently turns off the low side MOSFET, which prevents the output from sinking current and producing a negative transient on a pre-biased output (see Figures 6 and 7 on page 7).
应用
- Core Voltage Supplies for FPGAs and PowerPC Microprocessors
- Point-Of-Load Modules with Pre-Biased Start-Up Requirements
- High Frequency and High Current DC-DC Converters
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL6608CBZ | Obsolete | N/A | In Stock | RoHS:EN | SOIC | 8# | Tube | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6608CBZ-T | Obsolete | N/A | In Stock | RoHS:EN | SOIC | 8# | Reel | 3 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
- 产品变更通告英语PDF 266 KB 2020年6月04日
- 产品咨询英语PDF 106 KB PA16061 2016年6月08日
- 产品变更通告英语PDF 294 KB PCN14036 2014年7月08日
- 产品变更通告英语PDF 108 KB PCN12068 2012年8月21日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
- 其他英语PDF 1.17 MB TB389 2024年3月07日
- 其他英语PDF 293 KB tb363 2018年5月04日
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- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
应用说明和白皮书 (3)
- 产品变更通告英语PDF 266 KB 2020年6月04日
- 产品咨询英语PDF 106 KB PA16061 2016年6月08日
- 产品变更通告英语PDF 294 KB PCN14036 2014年7月08日
- 产品变更通告英语PDF 108 KB PCN12068 2012年8月21日
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