特性
- Pin-to-pin Compatible with HIP6601 SOIC family for Better Performance and Extra Protection Features
- Dual MOSFET Drives for Synchronous Rectified Bridge
- Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
- Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
- 36V Internal Bootstrap Schottky Diode
- Bootstrap Capacitor Overcharging Prevention
- Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
- Three-State PWM Input for Output Stage Shutdown
- Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement
- Pre-POR Overvoltage Protection
- VCC Undervoltage Protection
- Over Temperature Protection (OTP) with +42°C Hysteresis
- Expandable Bottom Copper Pad for Enhanced Heat Sinking
- Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
- Pb-Free Available (RoHS Compliant)
描述
The ISL6612 and ISL6613 are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors. The ISL6612 drives the upper gate to 12V, while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613 drives both upper and lower gates over a range of 5V to 12V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during startup. The over-temperature protection feature prevents failures resulting from excessive power dissipation by shutting off the outputs when its junction temperature exceeds +150°C (typically). The driver resets once its junction temperature returns to +108°C (typically). These drivers also feature a three-state PWM input which, working together with Intersil's multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.
应用
- Core Regulators for Intel® and AMD® Microprocessors
- High Current DC/DC Converters
- High Frequency and High Efficiency VRM and VRD
| Part Number | Status | Samples | Stock | RoHS | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL6612CBZ | Obsolete | N/A | Out of Stock | Contact | SOIC | 8# | Tube | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612CBZ-T | Obsolete | N/A | Out of Stock | Contact | SOIC | 8# | Reel | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612CBZA | Obsolete | N/A | Out of Stock | Contact | SOIC | 8# | Tube | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612CBZA-T | Obsolete | N/A | Out of Stock | Contact | SOIC | 8# | Reel | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612CRZ | Obsolete | N/A | In Stock | RoHS:EN | DFN | 10# | Tube | 2 | 0.5mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612CRZ-T | Obsolete | N/A | In Stock | RoHS:EN | DFN | 10# | Reel | 2 | 0.5mm | 3.0 x 3.0 x 0.90 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612ECBZ | Obsolete | N/A | Out of Stock | Contact | SOICN-EP | 8# | Tube | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612ECBZ-T | Obsolete | N/A | Out of Stock | Contact | SOICN-EP | 8# | Reel | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 0 to +70°C |
| ISL6612EIBZ | Obsolete | N/A | Out of Stock | Contact | SOICN-EP | 8# | Tube | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL6612EIBZ-T | Obsolete | N/A | Out of Stock | Contact | SOICN-EP | 8# | Reel | 3 | 1.3mm | 4.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
- 产品咨询英语PDF 106 KB PA16061 2016年6月08日
- 产品变更通告英语PDF 294 KB PCN14036 2014年7月08日
- 产品变更通告英语PDF 108 KB PCN12068 2012年8月21日
- 产品变更通告英语PDF 248 KB PCN10055 2010年6月30日
- 产品咨询英语PDF 191 KB PA10062 2010年6月15日
- 产品变更通告英语PDF 51 KB PCN10047 2010年5月12日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
- 其他英语PDF 264 KB tb447 2004年1月19日
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- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
应用说明和白皮书 (3)
- 产品咨询英语PDF 106 KB PA16061 2016年6月08日
- 产品变更通告英语PDF 294 KB PCN14036 2014年7月08日
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